Structural evolution in Ge+ implantation amorphous Si

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

  • W.W. Wu
  • H.H. Lin
  • S.L. Cheng
  • Y.L. Chueh
  • L.J. Chou
  • L.J. Chen

Detail(s)

Original languageEnglish
Pages (from-to)325-328
Journal / PublicationApplied Surface Science
Volume212-213
Online published26 Feb 2003
Publication statusPublished - 15 May 2003
Externally publishedYes

Conference

Title11th International Conference on Solid Films and Surfaces (ICSFS-11)
Location
PlaceFrance
CityMarseilles
Period8 - 12 July 2002

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0037566067&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(2d8daa8c-fcf8-48a6-9b84-a2dfd38a2e50).html

Abstract

The structural evolution in Ge+ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge+ to a dose of 5 × 1015 ions/cm 2. A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system. © 2003 Elsevier Science B.V. All rights reserved.

Research Area(s)

  • Auto-correlation function, High-resolution TEM, Ion implantation, Nanocrystallite, Preamorphization

Fingerprint

Publication fingerprints text

100
annealing INIS
100
Density Material Science
100
Nanocrystallites Material Science
100
Annealing Keyphrases
100
Amorphous Si Keyphrases
100
Structural Evolutio... Keyphrases
66
density INIS
50
Silicon Material Science
50
High-Resolution Tra... Material Science
50
Temperature Material Science
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Citation Format(s)

[ RIS ] [ BibTeX ]
Structural evolution in Ge+ implantation amorphous Si. / He, J.H.; Wu, W.W.; Lin, H.H. et al.
In: Applied Surface Science, Vol. 212-213, 15.05.2003, p. 325-328.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review