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Structural characterization of amorphized InP: Evidence for chemical disorder

  • C. J. Glover
  • , M. C. Ridgway
  • , K. M. Yu
  • , G. J. Foran
  • , T. W. Lee
  • , Y. Moon
  • , E. Yoon

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

Extended X-ray absorption fine structure measurements at the In K edge of stoichiometric InP amorphized by ion implantation reveal overcoordination of the In atom constituents and the presence of chemical disorder in the form of like-atom bonding. Excellent agreement is found between the measured bond-lengths and coordination numbers and recent theoretical calculations. The fraction of like-atom bonding is significant, suggesting that amorphous InP is best described by a Polk-like continuous random network with both even- and odd-membered rings.
Original languageEnglish
Pages (from-to)1713-1715
JournalApplied Physics Letters
Volume74
Issue number12
DOIs
Publication statusPublished - 22 Mar 1999
Externally publishedYes

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