Structural characterization of amorphised InAs with synchrotron radiation

G. deM Azevedo; M. C. Ridgway; K. M. Yu; C. J. Glover; G. J. Foran

doi:10.1016/S0168-583X(02)00471-8

Structural characterization of amorphised InAs with synchrotron radiation

G. deM Azevedo
, M. C. Ridgway
, K. M. Yu
, C. J. Glover
, G. J. Foran

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	851-855
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(02)00471-8
Publication status	Published - May 2002
Externally published	Yes

Research Keywords

Amorphous solids
EXAFS
InAs
Ion implantation

Access Output

10.1016/S0168-583X(02)00471-8

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{35e87c5aa9c64ab383faace71357a827,

title = "Structural characterization of amorphised InAs with synchrotron radiation",

abstract = "Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "Amorphous solids, EXAFS, InAs, Ion implantation",

author = "Azevedo, \{G. deM\} and Ridgway, \{M. C.\} and Yu, \{K. M.\} and Glover, \{C. J.\} and Foran, \{G. J.\}",

year = "2002",

month = may,

doi = "10.1016/S0168-583X(02)00471-8",

language = "English",

volume = "190",

pages = "851--855",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

Structural characterization of amorphised InAs with synchrotron radiation. / Azevedo, G. deM; Ridgway, M. C.; Yu, K. M. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 05.2002, p. 851-855.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Structural characterization of amorphised InAs with synchrotron radiation

AU - Azevedo, G. deM

AU - Ridgway, M. C.

AU - Yu, K. M.

AU - Glover, C. J.

AU - Foran, G. J.

PY - 2002/5

Y1 - 2002/5

N2 - Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general. © 2002 Elsevier Science B.V. All rights reserved.

AB - Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general. © 2002 Elsevier Science B.V. All rights reserved.

KW - Amorphous solids

KW - EXAFS

KW - InAs

KW - Ion implantation

UR - https://www.scopus.com/pages/publications/0036568970

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0036568970&origin=recordpage

U2 - 10.1016/S0168-583X(02)00471-8

DO - 10.1016/S0168-583X(02)00471-8

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 190

SP - 851

EP - 855

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Structural characterization of amorphised InAs with synchrotron radiation

Abstract

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this