Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Hari P. Nair
  • Adam M. Crook
  • Kin M. Yu
  • Seth R. Bank

Detail(s)

Original languageEnglish
Article number21103
Journal / PublicationApplied Physics Letters
Volume100
Issue number2
Publication statusPublished - 9 Jan 2012
Externally publishedYes

Abstract

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 m) wavelength range. © 2012 American Institute of Physics.

Citation Format(s)

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells. / Nair, Hari P.; Crook, Adam M.; Yu, Kin M.; Bank, Seth R.

In: Applied Physics Letters, Vol. 100, No. 2, 21103, 09.01.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review