Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

Gallium nitride (GaN) thin films cultured on sapphire substrates were treated with a 600 mJ/cm², 38 ns KrF excimer laser pulse for its structural and optical characteristics to be determined. After the treatment, the thickness of the GaN thin films-sapphire defective interfacial region was measured to be roughly 350 nm. It was also noted that the thin films' exposed interface were comparable to those gathered from its surface after it was subjected to ion milling.