Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

W. S. Wong; Y. Cho; E. R. Weber; T. Sands; K. M. Yu; J. Krüger; A. B. Wengrow; N. W. Cheung

doi:10.1063/1.124861

Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

W. S. Wong^*, Y. Cho, E. R. Weber, T. Sands, K. M. Yu, J. Krüger, A. B. Wengrow, N. W. Cheung

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

69 Citations (Scopus)

Abstract

Gallium nitride (GaN) thin films cultured on sapphire substrates were treated with a 600 mJ/cm², 38 ns KrF excimer laser pulse for its structural and optical characteristics to be determined. After the treatment, the thickness of the GaN thin films-sapphire defective interfacial region was measured to be roughly 350 nm. It was also noted that the thin films' exposed interface were comparable to those gathered from its surface after it was subjected to ion milling.

Original language	English
Pages (from-to)	1887-1889
Journal	Applied Physics Letters
Volume	75
Issue number	13
DOIs	https://doi.org/10.1063/1.124861
Publication status	Published - 27 Sept 1999
Externally published	Yes

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title = "Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off",

abstract = "Gallium nitride (GaN) thin films cultured on sapphire substrates were treated with a 600 mJ/cm2, 38 ns KrF excimer laser pulse for its structural and optical characteristics to be determined. After the treatment, the thickness of the GaN thin films-sapphire defective interfacial region was measured to be roughly 350 nm. It was also noted that the thin films' exposed interface were comparable to those gathered from its surface after it was subjected to ion milling.",

author = "Wong, {W. S.} and Y. Cho and Weber, {E. R.} and T. Sands and Yu, {K. M.} and J. Kr{\"u}ger and Wengrow, {A. B.} and Cheung, {N. W.}",

year = "1999",

month = sep,

day = "27",

doi = "10.1063/1.124861",

language = "English",

volume = "75",

pages = "1887--1889",

journal = "Applied Physics Letters",

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T1 - Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

AU - Wong, W. S.

AU - Cho, Y.

AU - Weber, E. R.

AU - Sands, T.

AU - Yu, K. M.

AU - Krüger, J.

AU - Wengrow, A. B.

AU - Cheung, N. W.

PY - 1999/9/27

Y1 - 1999/9/27

N2 - Gallium nitride (GaN) thin films cultured on sapphire substrates were treated with a 600 mJ/cm2, 38 ns KrF excimer laser pulse for its structural and optical characteristics to be determined. After the treatment, the thickness of the GaN thin films-sapphire defective interfacial region was measured to be roughly 350 nm. It was also noted that the thin films' exposed interface were comparable to those gathered from its surface after it was subjected to ion milling.

AB - Gallium nitride (GaN) thin films cultured on sapphire substrates were treated with a 600 mJ/cm2, 38 ns KrF excimer laser pulse for its structural and optical characteristics to be determined. After the treatment, the thickness of the GaN thin films-sapphire defective interfacial region was measured to be roughly 350 nm. It was also noted that the thin films' exposed interface were comparable to those gathered from its surface after it was subjected to ion milling.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032606210&origin=recordpage

U2 - 10.1063/1.124861

DO - 10.1063/1.124861

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 75

SP - 1887

EP - 1889

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

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