Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • A. Chaiken
  • K. Nauka
  • G. A. Gibson
  • Heon Lee
  • C. C. Yang
  • J. Wu
  • J. W. Ager
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)2390-2397
Journal / PublicationJournal of Applied Physics
Volume94
Issue number4
Publication statusPublished - 15 Aug 2003
Externally publishedYes

Abstract

Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.

Citation Format(s)

Structural and electronic properties of amorphous and polycrystalline In2Se3 films. / Chaiken, A.; Nauka, K.; Gibson, G. A. et al.
In: Journal of Applied Physics, Vol. 94, No. 4, 15.08.2003, p. 2390-2397.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review