Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

K. M. Leung; H. Q. Li; Y. S. Zou; K. L. Ma; Y. M. Chong; Q. Ye; W. J. Zhang; S. T. Lee; I. Bello

doi:10.1063/1.2207994

Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

K. M. Leung
, H. Q. Li
, Y. S. Zou
, K. L. Ma
, Y. M. Chong
, Q. Ye
, W. J. Zhang
, S. T. Lee
, I. Bello

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (-35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1%), not evident in FTIR, are clearly revealed by UV Raman analysis. © 2006 American Institute of Physics.

Original language	English
Article number	241922
Journal	Applied Physics Letters
Volume	88
Issue number	24
DOIs	https://doi.org/10.1063/1.2207994
Publication status	Published - 12 Jun 2006

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@article{11c0a076df0647b389043f259e74594e,

title = "Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy",

abstract = "Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (-35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1\%), not evident in FTIR, are clearly revealed by UV Raman analysis. {\textcopyright} 2006 American Institute of Physics.",

author = "Leung, \{K. M.\} and Li, \{H. Q.\} and Zou, \{Y. S.\} and Ma, \{K. L.\} and Chong, \{Y. M.\} and Q. Ye and Zhang, \{W. J.\} and Lee, \{S. T.\} and I. Bello",

year = "2006",

month = jun,

day = "12",

doi = "10.1063/1.2207994",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

AU - Leung, K. M.

AU - Li, H. Q.

AU - Zou, Y. S.

AU - Ma, K. L.

AU - Chong, Y. M.

AU - Ye, Q.

AU - Zhang, W. J.

AU - Lee, S. T.

AU - Bello, I.

PY - 2006/6/12

Y1 - 2006/6/12

N2 - Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (-35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1%), not evident in FTIR, are clearly revealed by UV Raman analysis. © 2006 American Institute of Physics.

AB - Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (-35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1%), not evident in FTIR, are clearly revealed by UV Raman analysis. © 2006 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/33745219407

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33745219407&origin=recordpage

U2 - 10.1063/1.2207994

DO - 10.1063/1.2207994

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241922

ER -

Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

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