Abstract
We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular-dynamics simulations. The 〈111〉-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other 〈111〉 directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T < 600 K, this behavior arises from temperature-dependent correlations. At T > 600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.
| Original language | English |
|---|---|
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 70 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Aug 2004 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of 'Strongly non-Arrhenius self-interstitial diffusion in vanadium'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver