Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI2 Layers

Xinfeng Chen; Xinkai Ding; Gaoyang Gou; Xiao Cheng Zeng

doi:10.1021/acs.nanolett.3c04869

Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI₂ Layers

Xinfeng Chen, Xinkai Ding, Gaoyang Gou^*, Xiao Cheng Zeng^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

24 Citations (Scopus)

Abstract

Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D “slidetronics”. Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX₂ (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr₂ and HgI₂ in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI₂ layers possess strong sliding ferroelectricity up to 0.16 μC/cm², readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI₂ layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime. © 2024 American Chemical Society

Original language	English
Pages (from-to)	3089-3096
Journal	Nano Letters
Volume	24
Issue number	10
Online published	1 Mar 2024
DOIs	https://doi.org/10.1021/acs.nanolett.3c04869
Publication status	Published - 13 Mar 2024

Funding

G.Y.G. acknowledges the funding support from National Natural Science Foundation of China (Grant No. 11574244). X.C.Z. acknowledges the support from Hong Kong Global STEM Professorship Scheme. X.F.C. acknowledges the support from China Scholarship Council. Hefei Advanced Computing Center is acknowledged for computational support.

Research Keywords

interlayer sliding spintronics
Rashba effect
sliding ferroelectricity
sliding phase transition
two-dimensional multilayer

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title = "Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI2 Layers",

abstract = "Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D “slidetronics”. Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime. {\textcopyright} 2024 American Chemical Society",

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AB - Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D “slidetronics”. Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime. © 2024 American Chemical Society

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