Stress testing and characterization of high-k dielectric thin films

W. Luo; D. Sunardi; Y. Kuo; W. Kuo

doi:10.1109/IRWS.2003.1283293

Stress testing and characterization of high-k dielectric thin films

W. Luo
, D. Sunardi
, Y. Kuo
, W. Kuo

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

While TaO_x, HfO_x, Hf-doped TaO_x and Zr-doped TaO_x thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO₂ in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.

Original language	English
Title of host publication	IEEE International Integrated Reliability Workshop Final Report
Publisher	IEEE
Pages	18-23
Volume	2003-January
ISBN (Print)	780381572
DOIs	https://doi.org/10.1109/IRWS.2003.1283293
Publication status	Published - 2003
Externally published	Yes
Event	2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States Duration: 20 Oct 2003 → 23 Oct 2003 https://ieeexplore.ieee.org/xpl/conhome/9026/proceeding

Publication series

Name
Volume	2003-January

Conference

Conference	2003 IEEE International Integrated Reliability Workshop, IRW 2003
Place	United States
City	Lake Tahoe
Period	20/10/03 → 23/10/03
Internet address	https://ieeexplore.ieee.org/xpl/conhome/9026/proceeding

Research Keywords

Analysis of variance
Dielectric breakdown
Dielectric thin films
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Humidity
Stress
Testing
Transient analysis

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10.1109/IRWS.2003.1283293

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@inproceedings{d9cfcc43a25943c9ba018abf50e3c5d1,

title = "Stress testing and characterization of high-k dielectric thin films",

abstract = "While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.",

keywords = "Analysis of variance, Dielectric breakdown, Dielectric thin films, Hafnium oxide, High K dielectric materials, High-K gate dielectrics, Humidity, Stress, Testing, Transient analysis",

author = "W. Luo and D. Sunardi and Y. Kuo and W. Kuo",

year = "2003",

doi = "10.1109/IRWS.2003.1283293",

language = "English",

isbn = "780381572",

volume = "2003-January",

publisher = "IEEE",

pages = "18--23",

booktitle = "IEEE International Integrated Reliability Workshop Final Report",

address = "United States",

note = "2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",

url = "https://ieeexplore.ieee.org/xpl/conhome/9026/proceeding",

}

Luo, W, Sunardi, D, Kuo, Y & Kuo, W 2003, Stress testing and characterization of high-k dielectric thin films. in IEEE International Integrated Reliability Workshop Final Report. vol. 2003-January, 1283293, IEEE, pp. 18-23, 2003 IEEE International Integrated Reliability Workshop, IRW 2003, Lake Tahoe, California, United States, 20/10/03. https://doi.org/10.1109/IRWS.2003.1283293

Stress testing and characterization of high-k dielectric thin films. / Luo, W.; Sunardi, D.; Kuo, Y. et al.
IEEE International Integrated Reliability Workshop Final Report. Vol. 2003-January IEEE, 2003. p. 18-23 1283293.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Stress testing and characterization of high-k dielectric thin films

AU - Luo, W.

AU - Sunardi, D.

AU - Kuo, Y.

AU - Kuo, W.

PY - 2003

Y1 - 2003

N2 - While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.

AB - While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.

KW - Analysis of variance

KW - Dielectric breakdown

KW - Dielectric thin films

KW - Hafnium oxide

KW - High K dielectric materials

KW - High-K gate dielectrics

KW - Humidity

KW - Stress

KW - Testing

KW - Transient analysis

UR - https://www.scopus.com/pages/publications/28844482108

UR - https://www.scopus.com/pages/publications/28844482108#tab=impact

U2 - 10.1109/IRWS.2003.1283293

DO - 10.1109/IRWS.2003.1283293

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 780381572

VL - 2003-January

SP - 18

EP - 23

BT - IEEE International Integrated Reliability Workshop Final Report

PB - IEEE

T2 - 2003 IEEE International Integrated Reliability Workshop, IRW 2003

Y2 - 20 October 2003 through 23 October 2003

ER -

Stress testing and characterization of high-k dielectric thin films

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