TY - GEN
T1 - Stress testing and characterization of high-k dielectric thin films
AU - Luo, W.
AU - Sunardi, D.
AU - Kuo, Y.
AU - Kuo, W.
PY - 2003
Y1 - 2003
N2 - While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.
AB - While TaOx, HfOx, Hf-doped TaOx and Zr-doped TaOx thin films exhibit promise as potential candidates for use as gate dielectric, their reliability is barely understood. Therefore, as an initial step in the investigation of their reliability, stress tests are conducted in this experimental study to characterize high-k thin films. In humidity stress tests, analyses of variance are performed on the measure defined in I-V and C-V curves to examine the significance of the stress effects. The high-k films are compared with SiO2 in terms of leakage current and relaxation current. By studying the dielectric relaxation and analyzing the transient current, the breakdown mode of the tested high-k films is identified, and a sensitive method of breakdown detection is proposed.
KW - Analysis of variance
KW - Dielectric breakdown
KW - Dielectric thin films
KW - Hafnium oxide
KW - High K dielectric materials
KW - High-K gate dielectrics
KW - Humidity
KW - Stress
KW - Testing
KW - Transient analysis
UR - http://www.scopus.com/inward/record.url?scp=28844482108&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-28844482108&origin=recordpage
U2 - 10.1109/IRWS.2003.1283293
DO - 10.1109/IRWS.2003.1283293
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 780381572
VL - 2003-January
SP - 18
EP - 23
BT - IEEE International Integrated Reliability Workshop Final Report
PB - IEEE
T2 - 2003 IEEE International Integrated Reliability Workshop, IRW 2003
Y2 - 20 October 2003 through 23 October 2003
ER -