TY - GEN
T1 - Stress-induced deterioration of nanocrystalline ITO embedded ZrHfO high-k nonvolatile memories
AU - Yang, Chia-Han
AU - Kuo, Yue
AU - Lin, Chen-Han
AU - Kuo, Way
PY - 2010
Y1 - 2010
N2 - The stress-induced deterioration phenomenon of the nc-ITO embedded Zr-doped HfO2 high-k gate dielectric film has been studied. The deterioration process is detectable from the decrease of the capacitance in the accumulation region and the shift of flatband voltage as well as the change of the amount of induced charges. In addition, the relaxation current and Coulomb blockage effect are influenced by the stress-induced process. Moreover, the nc-ITO embedded high-k capacitor shows the trap-assisted tunneling phenomenon and the Poole-Frenkel emission mechanism. ©The Electrochemical Society.
AB - The stress-induced deterioration phenomenon of the nc-ITO embedded Zr-doped HfO2 high-k gate dielectric film has been studied. The deterioration process is detectable from the decrease of the capacitance in the accumulation region and the shift of flatband voltage as well as the change of the amount of induced charges. In addition, the relaxation current and Coulomb blockage effect are influenced by the stress-induced process. Moreover, the nc-ITO embedded high-k capacitor shows the trap-assisted tunneling phenomenon and the Poole-Frenkel emission mechanism. ©The Electrochemical Society.
UR - https://www.scopus.com/pages/publications/79952661839
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79952661839&origin=recordpage
U2 - 10.1149/1.3481618
DO - 10.1149/1.3481618
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781566778220
VL - 33
SP - 307
EP - 311
BT - ECS Transactions
T2 - 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
Y2 - 11 October 2010 through 15 October 2010
ER -