TY - JOUR
T1 - Stress evolution due to electromigration in confined metal lines
AU - Korhonen, M. A.
AU - Borgesen, P.
AU - Tu, K. N.
AU - Li, Che-Yu
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1993/4/15
Y1 - 1993/4/15
N2 - Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
AB - Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0038035318&origin=recordpage
U2 - 10.1063/1.354073
DO - 10.1063/1.354073
M3 - RGC 21 - Publication in refereed journal
SN - 0021-8979
VL - 73
SP - 3790
EP - 3799
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
ER -