Stress evolution due to electromigration in confined metal lines

M. A. Korhonen; P. Borgesen; K. N. Tu; Che-Yu Li

doi:10.1063/1.354073

Stress evolution due to electromigration in confined metal lines

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

640 Scopus Citations

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Author(s)

M. A. Korhonen
P. Borgesen
K. N. Tu
Che-Yu Li

Detail(s)

Original language	English
Pages (from-to)	3790-3799
Journal / Publication	Journal of Applied Physics
Volume	73
Issue number	8
Publication status	Published - 15 Apr 1993
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.354073 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0038035318&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(addacdbd-10c9-434e-9b8a-e69b854e5c16).html

Abstract

Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.

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