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Strategies for Optimizing Electroplated Copper Microstructure and Prolonging Queue Time in Cu-Cu Bonding Applications

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Direct Cu-Cu bonding enables high-density 3D packaging with superior performance and low power consumption but faces a trade-off between bonding temperature and microstructural stability. Coarse-grained Cu requires high temperature (>300 °C), while nanograined Cu coarsens rapidly after plating. This study explores extending queue time and lowering bonding temperature through storage at low temperature, impurity incorporation, and hybrid structures. A stable and reliable Cu material for manufacturing is essential for next-generation heterogeneous 3D-IC integration. ©2026 IEEE.
Original languageEnglish
Title of host publication2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Place of PublicationUnited States
PublisherIEEE
ISBN (Electronic)979-8-3315-8598-3
ISBN (Print)979-8-3315-8599-0
DOIs
Publication statusPublished - 1 Mar 2026
Event10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) - Penang, Malaysia
Duration: 1 Mar 2026 → 4 Mar 2026
https://ieeexplore.ieee.org/xpl/conhome/11496632/proceeding

Conference

Conference10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Abbreviated titleEDTM 2026
PlaceMalaysia
CityPenang
Period1/03/26 → 4/03/26
Internet address

Funding

We thank for the support from the TRS Grant (T46-705/23-R) from the Research Grants Council of Hong Kong. The authors thank Doctech HK Ltd. for the material and technical support.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

Research Keywords

  • low temperature
  • impurity
  • hybrid structure

RGC Funding Information

  • RGC-funded

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