Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 112512 |
Pages (from-to) | 1-3 |
Journal / Publication | Applied Physics Letters |
Volume | 86 |
Issue number | 11 |
Publication status | Published - 14 Mar 2005 |
Externally published | Yes |
Link(s)
Abstract
Ferromagnetic In 1-xMn xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In 1-yAl yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In 1-yAl yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [11̄0] directions is general for III-Mn-As systems. © 2005 American Institute of Physics.
Citation Format(s)
Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis. / Liu, X.; Lim, W. L.; Ge, Z. et al.
In: Applied Physics Letters, Vol. 86, No. 11, 112512, 14.03.2005, p. 1-3.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review