Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • X. Liu
  • W. L. Lim
  • Z. Ge
  • S. Shen
  • M. Dobrowolska
  • J. K. Furdyna
  • T. Wojtowicz
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number112512
Pages (from-to)1-3
Journal / PublicationApplied Physics Letters
Volume86
Issue number11
Publication statusPublished - 14 Mar 2005
Externally publishedYes

Abstract

Ferromagnetic In 1-xMn xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In 1-yAl yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In 1-yAl yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [11̄0] directions is general for III-Mn-As systems. © 2005 American Institute of Physics.

Citation Format(s)

Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis. / Liu, X.; Lim, W. L.; Ge, Z. et al.

In: Applied Physics Letters, Vol. 86, No. 11, 112512, 14.03.2005, p. 1-3.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review