Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

Wenzhen Dou; Anping Huang; Yuhang Ji; Xiaodong Yang; Yanbo Xin; Hongliang Shi; Mei Wang; Zhisong Xiao; Miao Zhou; Paul K. Chu

doi:10.1039/d0cp02163f

Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

Wenzhen Dou, Anping Huang^*, Yuhang Ji, Xiaodong Yang, Yanbo Xin, Hongliang Shi, Mei Wang, Zhisong Xiao, Miao Zhou, Paul K. Chu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

32 Citations (Scopus)

Abstract

A promising BP/SnSe van der Waals (vdW) photovoltaic heterostructure was designed and investigated by first-principles calculations. The BP/SnSe vdW heterostructure showed inhibition of photogenerated carrier recombination as well as broad and high optical absorption intensity spanning the visible to deep ultraviolet regions reaching the order of 105 cm-1. The carrier mobility of the BP/SnSe vdW heterostructure exhibited anisotropic characteristics reaching approximately 103 cm2 V-1 s-1, with an intrinsic power conversion efficiency (PCE) of 11.96%. Our results show that the PCE can be increased to 17.24% when the conduction band offset between BP and SnSe is reduced by strain engineering. The distinctive and favorable properties suggest that the BP/SnSe vdW heterostructure has great potential for use in photovoltaic devices.

Original language	English
Pages (from-to)	14787-14795
Journal	Physical Chemistry Chemical Physics
Volume	22
Issue number	26
Online published	21 May 2020
DOIs	https://doi.org/10.1039/d0cp02163f
Publication status	Published - 14 Jul 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

TOTAL-ENERGY CALCULATIONS
SEMICONDUCTORS
PHOSPHORENE
SNSE
2D

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10.1039/d0cp02163f

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title = "Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure",

abstract = "A promising BP/SnSe van der Waals (vdW) photovoltaic heterostructure was designed and investigated by first-principles calculations. The BP/SnSe vdW heterostructure showed inhibition of photogenerated carrier recombination as well as broad and high optical absorption intensity spanning the visible to deep ultraviolet regions reaching the order of 105 cm-1. The carrier mobility of the BP/SnSe vdW heterostructure exhibited anisotropic characteristics reaching approximately 103 cm2 V-1 s-1, with an intrinsic power conversion efficiency (PCE) of 11.96%. Our results show that the PCE can be increased to 17.24% when the conduction band offset between BP and SnSe is reduced by strain engineering. The distinctive and favorable properties suggest that the BP/SnSe vdW heterostructure has great potential for use in photovoltaic devices.",

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author = "Wenzhen Dou and Anping Huang and Yuhang Ji and Xiaodong Yang and Yanbo Xin and Hongliang Shi and Mei Wang and Zhisong Xiao and Miao Zhou and Chu, {Paul K.}",

year = "2020",

month = jul,

day = "14",

doi = "10.1039/d0cp02163f",

language = "English",

volume = "22",

pages = "14787--14795",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

AU - Dou, Wenzhen

AU - Huang, Anping

AU - Ji, Yuhang

AU - Yang, Xiaodong

AU - Xin, Yanbo

AU - Shi, Hongliang

AU - Wang, Mei

AU - Xiao, Zhisong

AU - Zhou, Miao

AU - Chu, Paul K.

PY - 2020/7/14

Y1 - 2020/7/14

N2 - A promising BP/SnSe van der Waals (vdW) photovoltaic heterostructure was designed and investigated by first-principles calculations. The BP/SnSe vdW heterostructure showed inhibition of photogenerated carrier recombination as well as broad and high optical absorption intensity spanning the visible to deep ultraviolet regions reaching the order of 105 cm-1. The carrier mobility of the BP/SnSe vdW heterostructure exhibited anisotropic characteristics reaching approximately 103 cm2 V-1 s-1, with an intrinsic power conversion efficiency (PCE) of 11.96%. Our results show that the PCE can be increased to 17.24% when the conduction band offset between BP and SnSe is reduced by strain engineering. The distinctive and favorable properties suggest that the BP/SnSe vdW heterostructure has great potential for use in photovoltaic devices.

AB - A promising BP/SnSe van der Waals (vdW) photovoltaic heterostructure was designed and investigated by first-principles calculations. The BP/SnSe vdW heterostructure showed inhibition of photogenerated carrier recombination as well as broad and high optical absorption intensity spanning the visible to deep ultraviolet regions reaching the order of 105 cm-1. The carrier mobility of the BP/SnSe vdW heterostructure exhibited anisotropic characteristics reaching approximately 103 cm2 V-1 s-1, with an intrinsic power conversion efficiency (PCE) of 11.96%. Our results show that the PCE can be increased to 17.24% when the conduction band offset between BP and SnSe is reduced by strain engineering. The distinctive and favorable properties suggest that the BP/SnSe vdW heterostructure has great potential for use in photovoltaic devices.

KW - TOTAL-ENERGY CALCULATIONS

KW - SEMICONDUCTORS

KW - PHOSPHORENE

KW - SNSE

KW - 2D

KW - TOTAL-ENERGY CALCULATIONS

KW - SEMICONDUCTORS

KW - PHOSPHORENE

KW - SNSE

KW - 2D

KW - TOTAL-ENERGY CALCULATIONS

KW - SEMICONDUCTORS

KW - PHOSPHORENE

KW - SNSE

KW - 2D

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JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

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Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

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GRF: Nanostructured Ti-Based and Polymeric Orthopedic Implant Materials with Tailored Mechanobiocidal and Osteogenic Properties

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Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

Abstract

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GRF: Nanostructured Ti-Based and Polymeric Orthopedic Implant Materials with Tailored Mechanobiocidal and Osteogenic Properties

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