Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis

X. Liu; W. L. Lim; Z. Ge; S. Shen; M. Dobrowolska; J. K. Furdyna; T. Wojtowicz; K. M. Yu; W. Walukiewicz

doi:10.1063/1.1885190

Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis

X. Liu
, W. L. Lim
, Z. Ge
, S. Shen
, M. Dobrowolska
, J. K. Furdyna
, T. Wojtowicz
, K. M. Yu
, W. Walukiewicz

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

Ferromagnetic In _1-xMn _xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In _1-yAl _yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In _1-yAl _yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [11̄0] directions is general for III-Mn-As systems. © 2005 American Institute of Physics.

Original language	English
Article number	112512
Pages (from-to)	1-3
Journal	Applied Physics Letters
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.1885190
Publication status	Published - 14 Mar 2005
Externally published	Yes

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@article{bdd39f86921447f99ecfe4b4599bbdf9,

title = "Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis",

abstract = "Ferromagnetic In 1-xMn xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In 1-yAl yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In 1-yAl yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [1{\=1}0] directions is general for III-Mn-As systems. {\textcopyright} 2005 American Institute of Physics.",

author = "X. Liu and Lim, \{W. L.\} and Z. Ge and S. Shen and M. Dobrowolska and Furdyna, \{J. K.\} and T. Wojtowicz and Yu, \{K. M.\} and W. Walukiewicz",

year = "2005",

month = mar,

day = "14",

doi = "10.1063/1.1885190",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis

AU - Liu, X.

AU - Lim, W. L.

AU - Ge, Z.

AU - Shen, S.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Wojtowicz, T.

AU - Yu, K. M.

AU - Walukiewicz, W.

PY - 2005/3/14

Y1 - 2005/3/14

N2 - Ferromagnetic In 1-xMn xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In 1-yAl yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In 1-yAl yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [11̄0] directions is general for III-Mn-As systems. © 2005 American Institute of Physics.

AB - Ferromagnetic In 1-xMn xAs semiconductor films (x=0.12) were grown by low-temperature molecular beam epitaxy on In 1-yAl yAs-AlSb-GaAs hybrid substrates. The built-in compressive strain induced by the In 1-yAl yAs buffer leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by ferromagnetic resonance and by direct magnetization measurements unambiguously show the existence of a uniaxial anisotropy in the layer plane, similar to that observed in compressively strained GaMnAs. This suggests that the difference between [110] and [11̄0] directions is general for III-Mn-As systems. © 2005 American Institute of Physics.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-17944368715&origin=recordpage

U2 - 10.1063/1.1885190

DO - 10.1063/1.1885190

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112512

ER -

Strain-engineered ferromagnetic in 1-xMn xAs films with in-plane easy axis

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