Straight β-SIC nanorods synthesized by using C-Si-SiO2

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

79 Scopus Citations
View graph of relations

Author(s)

  • H. L. Lai
  • N. B. Wong
  • X. T. Zhou
  • H. Y. Peng
  • C. K Au Frederick
  • N. Wang
  • I. Bello
  • S. T. Lee
  • X. F. Duan

Detail(s)

Original languageEnglish
Pages (from-to)294-296
Journal / PublicationApplied Physics Letters
Volume76
Issue number3
Publication statusPublished - 17 Jan 2000

Abstract

Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C-Si-SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the β-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 μm. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported. © 2000 American Institute of Physics.

Citation Format(s)

Straight β-SIC nanorods synthesized by using C-Si-SiO2. / Lai, H. L.; Wong, N. B.; Zhou, X. T. et al.
In: Applied Physics Letters, Vol. 76, No. 3, 17.01.2000, p. 294-296.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review