Steady-state direct-current plasma immersion ion implantation using an electron cyclotron resonance plasma source

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)145-148
Journal / PublicationThin Solid Films
Volume390
Issue number1-2
Publication statusPublished - 30 Jun 2001

Abstract

We have developed a new direct-current (DC) plasma immersion ion implantation (PIII) technique by using a conducting grid positioned between the plasma source and sample chuck. In order to decrease the working gas pressure and increase the plasma density, an electron cyclotron resonance (ECR) plasma source was used in our experiments. In this paper, the experimental parameters and results pertaining to DC-PIII using an ECR plasma source are described. The uniformity of the ion dose and the energy monotonicity are discussed. Our experimental results indicate that DC-PIII is a novel and potentially useful technique for planar sample processing, particularly in microelectronics applications. © 2001 Elsevier Science B.V.

Research Area(s)

  • Plasma ion implantation