Steady-state direct-current plasma immersion ion implantation using a multipolar magnetic field electron cyclotron resonance plasma source

Steady-state direct-current plasma immersion ion implantation (PIII) for hydrogen was demonstrated using an electron cyclotron resonance plasma source with a multipolar magnetic field. A grounded conducting grid was employed between silicon wafer stage and the plasma source to stop the propagation of plasma sheath. Atomic force microscopy, hydrogen forward scattering and secondary ion mass spectrometry were used for the analysis. Results indicated uniform hydrogen (PIII) into the wafer and reduction in surface hydrogen component.