Stable Hysteresis-Free MoS2 Transistors With Low-k/High-k Bilayer Gate Dielectrics

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Fingerprint

???publication_fingerprints_help???

Material Science

Keyphrases

INIS

Engineering

Research OutputsResearch Output authored by Stable Hysteresis-Free MoS2 Transistors With Low-k/High-k Bilayer Gate Dielectrics is tagged with the concept