Stable, freestanding Ge nanocrystals

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

38 Scopus Citations
View graph of relations

Author(s)

  • I. D. Sharp
  • Q. Xu
  • C. Y. Liao
  • D. O. Yi
  • J. W. Beeman
  • Z. Liliental-Weber
  • D. N. Zakharov
  • J. W. Ager III
  • D. C. Chrzan
  • E. E. Haller

Detail(s)

Original languageEnglish
Article number124316
Journal / PublicationJournal of Applied Physics
Volume97
Issue number12
Publication statusPublished - 2005
Externally publishedYes

Abstract

Freestanding Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous Si O2 by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain freestanding nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Freestanding nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For freestanding as opposed to embedded Ge nanocrystals, an additional amorphouslike contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms. © 2005 American Institute of Physics.

Citation Format(s)

Stable, freestanding Ge nanocrystals. / Sharp, I. D.; Xu, Q.; Liao, C. Y. et al.
In: Journal of Applied Physics, Vol. 97, No. 12, 124316, 2005.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review