Abstract
We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O2 pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O2 pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.
| Original language | English |
|---|---|
| Article number | 483 |
| Journal | Nanoscale Research Letters |
| Volume | 8 |
| Online published | 16 Nov 2013 |
| DOIs | |
| Publication status | Published - 2013 |
| Externally published | Yes |
Research Keywords
- O2 partial pressure
- Oxygen defects
- Resistive change memory
- ZnO
Publisher's Copyright Statement
- This full text is made available under CC-BY 2.0. https://creativecommons.org/licenses/by/2.0/
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