Stability of oxides grown on tantalum silicide surfaces

A. Cros; K. N. Tu

doi:10.1063/1.337699

Stability of oxides grown on tantalum silicide surfaces

A. Cros
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

25 Citations (Scopus)

Abstract

The oxidation of TaSi₂ and Ta₂Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta₂O₅ is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.

Original language	English
Pages (from-to)	3323-3326
Journal	Journal of Applied Physics
Volume	60
Issue number	9
DOIs	https://doi.org/10.1063/1.337699
Publication status	Published - 1986
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Stability of oxides grown on tantalum silicide surfaces",

abstract = "The oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.",

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AU - Cros, A.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1986

Y1 - 1986

N2 - The oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.

AB - The oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.

UR - https://www.scopus.com/pages/publications/0001231315

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0001231315&origin=recordpage

U2 - 10.1063/1.337699

DO - 10.1063/1.337699

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 60

SP - 3323

EP - 3326

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Stability of oxides grown on tantalum silicide surfaces

Abstract

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