Stability of oxides grown on tantalum silicide surfaces
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 3323-3326 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 60 |
| Issue number | 9 |
| Publication status | Published - 1986 |
| Externally published | Yes |
Link(s)
Abstract
The oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
Stability of oxides grown on tantalum silicide surfaces. / Cros, A.; Tu, K. N.
In: Journal of Applied Physics, Vol. 60, No. 9, 1986, p. 3323-3326.
In: Journal of Applied Physics, Vol. 60, No. 9, 1986, p. 3323-3326.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
