Stability and Repeatability of a Karst-like Hierarchical Porous Silicon Oxide-Based Memristor

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Qin Gao
  • Anping Huang
  • Qi Hu
  • Xinjiang Zhang
  • Yu Chi
  • Runmiao Li
  • Yuhang Ji
  • Xueliang Chen
  • Rumeng Zhao
  • Meng Wang
  • Hongliang Shi
  • Mei Wang
  • Yimin Cui
  • Zhisong Xiao

Detail(s)

Original languageEnglish
Pages (from-to)21734-21740
Journal / PublicationACS Applied Materials and Interfaces
Volume11
Issue number24
Online published24 May 2019
Publication statusPublished - 19 Jun 2019

Abstract

A memristor architecture based on porous oxide materials has the potential to be used in artificial synaptic devices. Herein, we present a memristor system employing a karst-like hierarchically porous (KLHP) silicon oxide structure with good stability and repeatability. The KLHP structure prepared by an electrochemical process and thermal oxidation exhibits high ON-OFF ratios up to 105 during the endurance test, and the data can be maintained for 105 s at a small read voltage 0.1 V. The mechanism of lithium ion migration in the porous silicon oxide structure has been discussed by a simulated model. The porous silicon oxide-based memristor is very promising because of the enhanced performance as well as easily accessed neuromorphic computing.

Research Area(s)

  • hierarchical, karst, lithium ions, memristor, porous, silicon oxide

Citation Format(s)

Stability and Repeatability of a Karst-like Hierarchical Porous Silicon Oxide-Based Memristor. / Gao, Qin; Huang, Anping; Hu, Qi; Zhang, Xinjiang; Chi, Yu; Li, Runmiao; Ji, Yuhang; Chen, Xueliang; Zhao, Rumeng; Wang, Meng; Shi, Hongliang; Wang, Mei; Cui, Yimin; Xiao, Zhisong; Chu, Paul K.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 24, 19.06.2019, p. 21734-21740.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal