Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl; Fengyun Wang; Hugh E. Chung; George R. Kunnen; Senpo Yip; Edward H. Lee; Edwin Y. B. Pun; Gregory B. Raupp; David R. Allee; Johnny C. Ho

doi:10.1109/LED.2013.2250896

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl, Fengyun Wang, Hugh E. Chung, George R. Kunnen, Senpo Yip, Edward H. Lee, Edwin Y. B. Pun, Gregory B. Raupp, David R. Allee, Johnny C. Ho

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm² V ^-1 s^-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. © 1980-2012 IEEE.

Original language	English
Article number	6515612
Pages (from-to)	765-767
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2250896
Publication status	Published - 2013

Research Keywords

InAs
low-frequency noise
nanowire (NW) parallel arrays
stability
thin-film transistors (TFTs)

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10.1109/LED.2013.2250896

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title = "Stability and low-frequency noise in InAs NW parallel-array thin-film transistors",

abstract = "In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. {\textcopyright} 1980-2012 IEEE.",

keywords = "InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)",

author = "Wahl, {Richard E.} and Fengyun Wang and Chung, {Hugh E.} and Kunnen, {George R.} and Senpo Yip and Lee, {Edward H.} and Pun, {Edwin Y. B.} and Raupp, {Gregory B.} and Allee, {David R.} and Ho, {Johnny C.}",

year = "2013",

doi = "10.1109/LED.2013.2250896",

language = "English",

volume = "34",

pages = "765--767",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

AU - Wahl, Richard E.

AU - Wang, Fengyun

AU - Chung, Hugh E.

AU - Kunnen, George R.

AU - Yip, Senpo

AU - Lee, Edward H.

AU - Pun, Edwin Y. B.

AU - Raupp, Gregory B.

AU - Allee, David R.

AU - Ho, Johnny C.

PY - 2013

Y1 - 2013

N2 - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. © 1980-2012 IEEE.

AB - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs. © 1980-2012 IEEE.

KW - InAs

KW - low-frequency noise

KW - nanowire (NW) parallel arrays

KW - stability

KW - thin-film transistors (TFTs)

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U2 - 10.1109/LED.2013.2250896

DO - 10.1109/LED.2013.2250896

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 34

SP - 765

EP - 767

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 6515612

ER -

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

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Research Keywords

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