Sputter deposition of cathodes in organic light emitting diodes

L. S. Hung; L. S. Liao; C. S. Lee; S. T. Lee

doi:10.1063/1.371410

Sputter deposition of cathodes in organic light emitting diodes

L. S. Hung, L. S. Liao, C. S. Lee, S. T. Lee

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

94 Citations (Scopus)

Abstract

Sputter deposition was employed for cathode preparation in organic light emitting diodes (OLEDs). A thin film of copper phthalocyanine (CuPc) was found to be an effective buffer layer in preventing sputter damage to the OLED layer structure. However, the CuPc layer forms an electron-injection barrier with the underlying Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface from a sputter-deposited Al (Li) cathode was found to reduce the injection barrier at the interface and make the overall device efficiency comparable to a device having an evaporated MgAg cathode. The devices exhibited good operational stability with a half lifetime greater than 3800 h at 20 mA/cm². © 1999 American Institute of Physics.

Original language	English
Pages (from-to)	4607-4612
Journal	Journal of Applied Physics
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.371410
Publication status	Published - 15 Oct 1999

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title = "Sputter deposition of cathodes in organic light emitting diodes",

abstract = "Sputter deposition was employed for cathode preparation in organic light emitting diodes (OLEDs). A thin film of copper phthalocyanine (CuPc) was found to be an effective buffer layer in preventing sputter damage to the OLED layer structure. However, the CuPc layer forms an electron-injection barrier with the underlying Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface from a sputter-deposited Al (Li) cathode was found to reduce the injection barrier at the interface and make the overall device efficiency comparable to a device having an evaporated MgAg cathode. The devices exhibited good operational stability with a half lifetime greater than 3800 h at 20 mA/cm2. {\textcopyright} 1999 American Institute of Physics.",

author = "Hung, {L. S.} and Liao, {L. S.} and Lee, {C. S.} and Lee, {S. T.}",

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T1 - Sputter deposition of cathodes in organic light emitting diodes

AU - Hung, L. S.

AU - Liao, L. S.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 1999/10/15

Y1 - 1999/10/15

N2 - Sputter deposition was employed for cathode preparation in organic light emitting diodes (OLEDs). A thin film of copper phthalocyanine (CuPc) was found to be an effective buffer layer in preventing sputter damage to the OLED layer structure. However, the CuPc layer forms an electron-injection barrier with the underlying Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface from a sputter-deposited Al (Li) cathode was found to reduce the injection barrier at the interface and make the overall device efficiency comparable to a device having an evaporated MgAg cathode. The devices exhibited good operational stability with a half lifetime greater than 3800 h at 20 mA/cm2. © 1999 American Institute of Physics.

AB - Sputter deposition was employed for cathode preparation in organic light emitting diodes (OLEDs). A thin film of copper phthalocyanine (CuPc) was found to be an effective buffer layer in preventing sputter damage to the OLED layer structure. However, the CuPc layer forms an electron-injection barrier with the underlying Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface from a sputter-deposited Al (Li) cathode was found to reduce the injection barrier at the interface and make the overall device efficiency comparable to a device having an evaporated MgAg cathode. The devices exhibited good operational stability with a half lifetime greater than 3800 h at 20 mA/cm2. © 1999 American Institute of Physics.

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DO - 10.1063/1.371410

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 86

SP - 4607

EP - 4612

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Sputter deposition of cathodes in organic light emitting diodes

Abstract

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