Spreading resistance profiling study of GeSi/Si structures by high dose Ge implantation into Si

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journalNot applicable

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Author(s)

  • W. Y. Cheung
  • S. P. Wong
  • I. H. Wilson
  • Tonghe Zhang
  • Paul K. Chu

Detail(s)

Original languageEnglish
Pages (from-to)201-206
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume354
Publication statusPublished - 1995
Externally publishedYes

Conference

TitleProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA
Period28 November - 2 December 1994

Abstract

Hetero-structures of GeSi layers on Si have been produced by high dose Ge implantation into p-type (100) Si wafers at 150 or 300 keV at various doses. From spreading resistance profiling measurements, it is found that for samples implanted at 300 keV at a sufficiently high dose, there is an unexpected resistivity type conversion due to the Ge implantation. The depths of the n-p junction formed as-implanted can be larger than 1.5 μm, far beyond the Ge projected range. Upon annealing, the junction position moves toward the surface and eventually stops at a depth corresponding to the thickness of the GeSi layer. However, no such n-p junction formation was observed in the spreading resistance profiles of the 150 keV implanted samples. These spreading resistance results are discussed in conjunction with results from RBS and SIMS experiments.

Citation Format(s)

Spreading resistance profiling study of GeSi/Si structures by high dose Ge implantation into Si. / Cheung, W. Y.; Wong, S. P.; Wilson, I. H.; Zhang, Tonghe; Chu, Paul K.

In: Materials Research Society Symposium - Proceedings, Vol. 354, 1995, p. 201-206.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journalNot applicable