TY - JOUR
T1 - Spontaneous parametric four wave mixing and fluorescence lifetime manipulation in the diamond nitrogen vacancy center
AU - Khan, Ghulam Abbas
AU - Ahmed, Irfan
AU - Raza, Faizan
AU - Wang, Ruimen
AU - Li, Changbiao
AU - Zhang, Yanpeng
PY - 2018/9/1
Y1 - 2018/9/1
N2 - We report the lifetime of spontaneous parametric four wave mixing (SP-FWM) and multiorder fluorescence in two-, three-, and four-level systems of negatively charged nitrogen vacancy (NV−) in diamond. The lifetime of SP-FWM is enhanced at high power by the induced dark state from coupling fields. The reduction and enhancement in fluorescence lifetime are attributed to destructive and constructive quantum interference, respectively. The quantum interference is induced by interaction among different decay pathways of spontaneous emission by closely spaced energy levels, which can be controlled by dipole–dipole interaction and the mutual orientations of dipole moments. The lifetime is observed to be longer in two-level as compared to three-level and four-level systems. The different measured lifetimes suggest the sensitivity of these NV systems to quantum interference and the dressing effect. These outcomes may provide new insights in development of all-optical communication devices and quantum storage on photonic chips.
AB - We report the lifetime of spontaneous parametric four wave mixing (SP-FWM) and multiorder fluorescence in two-, three-, and four-level systems of negatively charged nitrogen vacancy (NV−) in diamond. The lifetime of SP-FWM is enhanced at high power by the induced dark state from coupling fields. The reduction and enhancement in fluorescence lifetime are attributed to destructive and constructive quantum interference, respectively. The quantum interference is induced by interaction among different decay pathways of spontaneous emission by closely spaced energy levels, which can be controlled by dipole–dipole interaction and the mutual orientations of dipole moments. The lifetime is observed to be longer in two-level as compared to three-level and four-level systems. The different measured lifetimes suggest the sensitivity of these NV systems to quantum interference and the dressing effect. These outcomes may provide new insights in development of all-optical communication devices and quantum storage on photonic chips.
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U2 - 10.1364/JOSAB.35.002137
DO - 10.1364/JOSAB.35.002137
M3 - RGC 21 - Publication in refereed journal
SN - 0740-3224
VL - 35
SP - 2137
EP - 2143
JO - Journal of the Optical Society of America B: Optical Physics
JF - Journal of the Optical Society of America B: Optical Physics
IS - 9
ER -