Spontaneous Layer-Pseudospin Domain Walls in Bilayer Graphene

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number116803
Journal / PublicationPhysical Review Letters
Volume113
Issue number11
Publication statusPublished - 12 Sept 2014
Externally publishedYes

Abstract

Bilayer graphene is susceptible to a family of unusual broken symmetry states with spin and valley dependent layer polarization. We report on a microscopic study of the domain walls in these systems, demonstrating that they have interesting microscopic structure related to the topological character of the ordered states. We use our results to show that the metal-insulator transition temperature in bilayer graphene is reduced from mean-field estimates by thermal excitation of domain walls.

Citation Format(s)

Spontaneous Layer-Pseudospin Domain Walls in Bilayer Graphene. / Li(李潇), Xiao; Zhang, Fan; Niu, Qian et al.
In: Physical Review Letters, Vol. 113, No. 11, 116803, 12.09.2014.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review