Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

4 Scopus Citations
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Author(s)

  • Zhenyi Yang
  • Sik-Lam Siu
  • Wing-Shan Tam
  • Chi-Wah Kok
  • Chi-Wah Leung
  • P. T. Lai
  • Wing-Man Tang
  • P. W T Pong

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number2279849
Journal / PublicationIEEE Transactions on Magnetics
Volume50
Issue number1
Publication statusPublished - Jan 2014

Abstract

This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE.

Research Area(s)

  • Magnetic field-effect transistor (MAGFET), Sectorial, Sensitivity, Sensitivity deterioration, Split-drain

Citation Format(s)

Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration. / Yang, Zhenyi; Siu, Sik-Lam; Tam, Wing-Shan; Kok, Chi-Wah; Leung, Chi-Wah; Lai, P. T.; Wong, Hei; Tang, Wing-Man; Pong, P. W T.

In: IEEE Transactions on Magnetics, Vol. 50, No. 1, 2279849, 01.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review