TY - JOUR
T1 - Split-drain magnetic field-effect transistor channel charge trapping and stress induced sensitivity deterioration
AU - Yang, Zhenyi
AU - Siu, Sik-Lam
AU - Tam, Wing-Shan
AU - Kok, Chi-Wah
AU - Leung, Chi-Wah
AU - Lai, P. T.
AU - Wong, Hei
AU - Tang, Wing-Man
AU - Pong, P. W T
PY - 2014/1
Y1 - 2014/1
N2 - This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE.
AB - This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE.
KW - Magnetic field-effect transistor (MAGFET)
KW - Sectorial
KW - Sensitivity
KW - Sensitivity deterioration
KW - Split-drain
UR - http://www.scopus.com/inward/record.url?scp=84901643695&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84901643695&origin=recordpage
U2 - 10.1109/TMAG.2013.2279849
DO - 10.1109/TMAG.2013.2279849
M3 - RGC 21 - Publication in refereed journal
SN - 0018-9464
VL - 50
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 1
M1 - 2279849
ER -