TY - JOUR
T1 - Spin-valve-like magnetoresistance in a Ni-Mn-In thin film
AU - Agarwal, Sandeep
AU - Wang, Baomin
AU - Yang, Huali
AU - Dhanapal, Pravarthana
AU - Shen, Yuan
AU - Wang, Junling
AU - Wang, Hailong
AU - Zhao, Jianhua
AU - Li, Run-Wei
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2018/6/25
Y1 - 2018/6/25
N2 - Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10-400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium. © 2018 American Physical Society.
AB - Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10-400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium. © 2018 American Physical Society.
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U2 - 10.1103/PhysRevB.97.214427
DO - 10.1103/PhysRevB.97.214427
M3 - RGC 21 - Publication in refereed journal
SN - 2469-9950
VL - 97
JO - Physical Review B
JF - Physical Review B
IS - 21
M1 - 214427
ER -