Abstract
Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot embedded in a tunneling barrier is investigated using the Bardeen transfer Hamiltonian. The tunneling current oscillates with an increasing magnetic field for a fixed bias. Many peaks are observed with an increasing external bias under a fixed magnetic field. Spin polarization of the tunneling current is tuned by changing the external bias under a weak magnetic field. © 2005 The American Physical Society.
| Original language | English |
|---|---|
| Article number | 155309 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 71 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2005 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Chang, K., Chan, K. S., & Peeters, F. M. (2005). Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot. Physical Review B - Condensed Matter and Materials Physics, 71(15), [155309]. https://doi.org/10.1103/PhysRevB.71.155309. The copyright of this article is owned by American Physical Society.
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