Abstract
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k3 Dresselhaus effect. The spin-dependent transmission of an electron can be obtained analytically. By comparing with previous work [Phys. Rev. B 67, 201304(R) (2003) and Phys. Rev. Lett. 93, 056601 (2004)], it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions. © 2005 The American Physical Society.
| Original language | English |
|---|---|
| Article number | 153314 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 72 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 15 Oct 2005 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Wang, L. G., Yang, W., Chang, K., & Chan, K. S. (2005). Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect. Physical Review B - Condensed Matter and Materials Physics, 72(15), [153314]. https://doi.org/10.1103/PhysRevB.72.153314. The copyright of this article is owned by American Physical Society.
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