Special modulator for high frequency, low-voltage plasma immersion ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xiubo Tian
  • Xiaofeng Wang
  • Baoyin Tang
  • Ping K. Ko
  • Yiu-Chung Cheng

Detail(s)

Original languageEnglish
Pages (from-to)1824-1828
Journal / PublicationReview of Scientific Instruments
Volume70
Issue number3
Publication statusPublished - Mar 1999

Abstract

Plasma immersion ion implantation is a burgeoning surface modification technique and not limited by the line-of-sight restriction plaguing conventional beam-line ion implantation. It is therefore an excellent technique to treat interior surfaces as well as components of a complex shape. To enhance the implant uniformity and increase the thickness of the modified layer, we are using a high frequency, low-voltage process to achieve high temperature and dose rate to increase the thickness of the modified layer. The low voltage conditions also lead to a thinner sheath more favorable to conformal implantation. In this article, we will describe our special modulator consisting of a single ended forward converter with a step-up transformer. The modulator is designed to operate from 5 to 35 kHz and the output voltage is adjustable to an upper ceiling of 5000 V that is deliberately chosen to be our voltage limit for the present experiments. We will also present experimental data on SS304 stainless steel materials elucidating the advantages of our modulator and high frequency, low-voltage experimental protocols. © 1999 American Institute of Physics.

Citation Format(s)

Special modulator for high frequency, low-voltage plasma immersion ion implantation. / Tian, Xiubo; Wang, Xiaofeng; Tang, Baoyin; Chu, Paul K.; Ko, Ping K.; Cheng, Yiu-Chung.

In: Review of Scientific Instruments, Vol. 70, No. 3, 03.1999, p. 1824-1828.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review