Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures

W. S. Lau, O. Y. Wong, H. Wong

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors. © 2013 IEEE.
Original languageEnglish
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong, China
Duration: 3 Jun 20135 Jun 2013

Conference

Conference2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
PlaceHong Kong, China
CityHong Kong
Period3/06/135/06/13

Research Keywords

  • high-k capacitors
  • unified theory

Fingerprint

Dive into the research topics of 'Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures'. Together they form a unique fingerprint.

Cite this