Abstract
It has been difficult to distinguish whether the leakage current mechanism is Schottky emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two mechanisms can be combined into a unified theory as illustrated by some examples involving hafnium oxide capacitors. © 2013 IEEE.
| Original language | English |
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| Title of host publication | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 |
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| Publication status | Published - 2013 |
| Event | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong, China Duration: 3 Jun 2013 → 5 Jun 2013 |
Conference
| Conference | 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 |
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| Place | Hong Kong, China |
| City | Hong Kong |
| Period | 3/06/13 → 5/06/13 |
Research Keywords
- high-k capacitors
- unified theory