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Solvent Effects on Light-Emitting Properties of Si Nanocrystals

  • Xinglong Wu*
  • , Teng Qiu
  • , Paul K. Chu
  • *Corresponding author for this work

    Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

    Abstract

    It is presently accepted that the band gap widens as a result of quantum confinement, which allows Si crystallites sized below 5 nm to exhibit visible photoluminescence (PL). However, many research groups have reported that when the crystallite size decreases to a few nm, the PL peak energy does not increase much beyond 2.1 eV even when the crystallite size drops well below 3 nm in porous silicon (PS).It has become increasingly clear that the analysis is partially hampered by diffusion drift of excitons prior to recombination from small crystallites to larger ones and by averages over large distributions. Thus, dispersion of the material into ultrasmall particles allows the isolation of single particle effects and opens the way for direct theoretical examination. In previous investigations, Si nanocrystals crumbled
    from PS are usually mixed with a polar solvent to achieve uniform distribution. The solvent effect on the light-emitting properties of the composite system has not been investigated extensively and is relatively unknown. Hence, it is necessary to design some experiments to fathom the phenomenon. Using ultrasonic vibrations of as-made porous silicon in water, benzene, chloroform, and toluene, four groups of suspensions of Si nanocrystals are prepared in order to explore the influence of solvents on
    the light-emitting properties of Si nanocrystals. Photoluminescence (PL) examinations show that the strongest PL spectrum appears from the toluene suspension with the smallest HOMO/LUMO gap.This result can be explained on the basis of the frontier orbital theory and toluene chemisorption model. In addition, shifts of the PL peaks are observed in different suspensions. This behavior is believed to be due to the influence of the solvent polarity.
    Original languageEnglish
    Title of host publicationICAMT 2005 AND ICAM 2005 - ABSTRACTS
    Publication statusPublished - Jul 2005
    Event3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) and 9th International Conference on Advanced Materials (ICAM 2005) - Suntec Singapore International Convention & Exhibition Centre, Singapore
    Duration: 3 Jul 20058 Jul 2005
    http://www.mrs.org.sg/icmat2005/

    Conference

    Conference3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) and 9th International Conference on Advanced Materials (ICAM 2005)
    Abbreviated titleICMAT 2005 & ICAM 2005
    PlaceSingapore
    Period3/07/058/07/05
    Internet address

    Bibliographical note

    Research Unit(s) information for this publication is provided by the author(s) concerned.

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