Solution-processed inorganic copper(I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

Tao Ding; Ning Wang; Chen Wang; Xinghua Wu; Wenbo Liu; Qichun Zhang; Weijun Fan; Xiao Wei Sun

doi:10.1039/c7ra03433d

Solution-processed inorganic copper(I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

Tao Ding, Ning Wang, Chen Wang, Xinghua Wu, Wenbo Liu, Qichun Zhang, Weijun Fan, Xiao Wei Sun^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

28 Citations (Scopus)

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Abstract

We report the advantageous properties of inorganic copper(I) thiocyanate (CuSCN) as a solution-processable hole injection material in quantum dot-based light-emitting diodes (QLEDs). CuSCN, with its high work function, it decreases the turn-on voltage (V_th) by 0.8 volt to 3.4 V as compared with devices based on the most-widely used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (V_th = 4.2 V). As a transparent, highly stable and low cost commercial material, CuSCN acting as the hole injection layer (HIL) gives the QLED better V_th, and comparable performance to PEDOT:PSS-based QLED for other parameters including maximum luminance and external quantum efficiency. The decreased V_th can improve the power efficiency and is a necessary step in meeting market demand. The successful demonstration of the solution-processed inorganic HIL using simple and low temperature processing routes provide guidelines and prospects for the development of reliable all-inorganic and tandem QLEDs and possible commercial applications at a large scale.

Original language	English
Pages (from-to)	26322-26327
Journal	RSC Advances
Volume	7
Issue number	42
Online published	17 May 2017
DOIs	https://doi.org/10.1039/c7ra03433d
Publication status	Published - 2017
Externally published	Yes

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title = "Solution-processed inorganic copper(I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes",

abstract = "We report the advantageous properties of inorganic copper(I) thiocyanate (CuSCN) as a solution-processable hole injection material in quantum dot-based light-emitting diodes (QLEDs). CuSCN, with its high work function, it decreases the turn-on voltage (Vth) by 0.8 volt to 3.4 V as compared with devices based on the most-widely used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (Vth = 4.2 V). As a transparent, highly stable and low cost commercial material, CuSCN acting as the hole injection layer (HIL) gives the QLED better Vth, and comparable performance to PEDOT:PSS-based QLED for other parameters including maximum luminance and external quantum efficiency. The decreased Vth can improve the power efficiency and is a necessary step in meeting market demand. The successful demonstration of the solution-processed inorganic HIL using simple and low temperature processing routes provide guidelines and prospects for the development of reliable all-inorganic and tandem QLEDs and possible commercial applications at a large scale.",

author = "Tao Ding and Ning Wang and Chen Wang and Xinghua Wu and Wenbo Liu and Qichun Zhang and Weijun Fan and Sun, {Xiao Wei}",

year = "2017",

doi = "10.1039/c7ra03433d",

language = "English",

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TY - JOUR

T1 - Solution-processed inorganic copper(I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

AU - Ding, Tao

AU - Wang, Ning

AU - Wang, Chen

AU - Wu, Xinghua

AU - Liu, Wenbo

AU - Zhang, Qichun

AU - Fan, Weijun

AU - Sun, Xiao Wei

PY - 2017

Y1 - 2017

N2 - We report the advantageous properties of inorganic copper(I) thiocyanate (CuSCN) as a solution-processable hole injection material in quantum dot-based light-emitting diodes (QLEDs). CuSCN, with its high work function, it decreases the turn-on voltage (Vth) by 0.8 volt to 3.4 V as compared with devices based on the most-widely used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (Vth = 4.2 V). As a transparent, highly stable and low cost commercial material, CuSCN acting as the hole injection layer (HIL) gives the QLED better Vth, and comparable performance to PEDOT:PSS-based QLED for other parameters including maximum luminance and external quantum efficiency. The decreased Vth can improve the power efficiency and is a necessary step in meeting market demand. The successful demonstration of the solution-processed inorganic HIL using simple and low temperature processing routes provide guidelines and prospects for the development of reliable all-inorganic and tandem QLEDs and possible commercial applications at a large scale.

AB - We report the advantageous properties of inorganic copper(I) thiocyanate (CuSCN) as a solution-processable hole injection material in quantum dot-based light-emitting diodes (QLEDs). CuSCN, with its high work function, it decreases the turn-on voltage (Vth) by 0.8 volt to 3.4 V as compared with devices based on the most-widely used poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) (Vth = 4.2 V). As a transparent, highly stable and low cost commercial material, CuSCN acting as the hole injection layer (HIL) gives the QLED better Vth, and comparable performance to PEDOT:PSS-based QLED for other parameters including maximum luminance and external quantum efficiency. The decreased Vth can improve the power efficiency and is a necessary step in meeting market demand. The successful demonstration of the solution-processed inorganic HIL using simple and low temperature processing routes provide guidelines and prospects for the development of reliable all-inorganic and tandem QLEDs and possible commercial applications at a large scale.

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U2 - 10.1039/c7ra03433d

DO - 10.1039/c7ra03433d

M3 - RGC 21 - Publication in refereed journal

SN - 2046-2069

VL - 7

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JO - RSC Advances

JF - RSC Advances

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ER -

Solution-processed inorganic copper(I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

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