Solute effect of Cu on interdiffusion in Al3Ti compound films

J. Tardy; K. N. Tu

doi:10.1103/PhysRevB.32.2070

Solute effect of Cu on interdiffusion in Al₃Ti compound films

J. Tardy
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

112 Citations (Scopus)

Abstract

We study the interdiffusion and formation of Al₃Ti, in bimetallic thin films of Al/Ti and (Al0.25 at. % Cu)/Ti, both with and without W diffusion markers, in the temperature range 350-500 °C. The growth kinetics of Al₃Ti and marker displacement were measured by Rutherford backscattering spectroscopy. Complementary structural and compositional information were obtained by glancing-incidence x-ray diffraction, transmission electron microscopy, Auger-electron spectroscopy, and secondary-ion-mass spectroscopy. The effect of Cu, revealed by marker analysis of the intrinsic diffusivities of Al and Ti in Al₃Ti, is to increase the activation energy of Ti diffusion from 1.68 eV to 2.17 eV while the diffusion of Al is much less affected. By examining the crystal structure of Al₃Ti, a vacancy mechanism with Cu occupying Al sites is proposed to explain the solute effect. © 1985 The American Physical Society.

Original language	English
Pages (from-to)	2070-2081
Journal	Physical Review B
Volume	32
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.32.2070
Publication status	Published - 15 Aug 1985
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Access Output

10.1103/PhysRevB.32.2070

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{2e98c4557a35451b9b5fe68f9357ef08,

title = "Solute effect of Cu on interdiffusion in Al3Ti compound films",

abstract = "We study the interdiffusion and formation of Al3Ti, in bimetallic thin films of Al/Ti and (Al0.25 at. \% Cu)/Ti, both with and without W diffusion markers, in the temperature range 350-500 °C. The growth kinetics of Al3Ti and marker displacement were measured by Rutherford backscattering spectroscopy. Complementary structural and compositional information were obtained by glancing-incidence x-ray diffraction, transmission electron microscopy, Auger-electron spectroscopy, and secondary-ion-mass spectroscopy. The effect of Cu, revealed by marker analysis of the intrinsic diffusivities of Al and Ti in Al3Ti, is to increase the activation energy of Ti diffusion from 1.68 eV to 2.17 eV while the diffusion of Al is much less affected. By examining the crystal structure of Al3Ti, a vacancy mechanism with Cu occupying Al sites is proposed to explain the solute effect. {\textcopyright} 1985 The American Physical Society.",

author = "J. Tardy and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1985",

month = aug,

day = "15",

doi = "10.1103/PhysRevB.32.2070",

language = "English",

volume = "32",

pages = "2070--2081",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Solute effect of Cu on interdiffusion in Al3Ti compound films

AU - Tardy, J.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1985/8/15

Y1 - 1985/8/15

N2 - We study the interdiffusion and formation of Al3Ti, in bimetallic thin films of Al/Ti and (Al0.25 at. % Cu)/Ti, both with and without W diffusion markers, in the temperature range 350-500 °C. The growth kinetics of Al3Ti and marker displacement were measured by Rutherford backscattering spectroscopy. Complementary structural and compositional information were obtained by glancing-incidence x-ray diffraction, transmission electron microscopy, Auger-electron spectroscopy, and secondary-ion-mass spectroscopy. The effect of Cu, revealed by marker analysis of the intrinsic diffusivities of Al and Ti in Al3Ti, is to increase the activation energy of Ti diffusion from 1.68 eV to 2.17 eV while the diffusion of Al is much less affected. By examining the crystal structure of Al3Ti, a vacancy mechanism with Cu occupying Al sites is proposed to explain the solute effect. © 1985 The American Physical Society.

AB - We study the interdiffusion and formation of Al3Ti, in bimetallic thin films of Al/Ti and (Al0.25 at. % Cu)/Ti, both with and without W diffusion markers, in the temperature range 350-500 °C. The growth kinetics of Al3Ti and marker displacement were measured by Rutherford backscattering spectroscopy. Complementary structural and compositional information were obtained by glancing-incidence x-ray diffraction, transmission electron microscopy, Auger-electron spectroscopy, and secondary-ion-mass spectroscopy. The effect of Cu, revealed by marker analysis of the intrinsic diffusivities of Al and Ti in Al3Ti, is to increase the activation energy of Ti diffusion from 1.68 eV to 2.17 eV while the diffusion of Al is much less affected. By examining the crystal structure of Al3Ti, a vacancy mechanism with Cu occupying Al sites is proposed to explain the solute effect. © 1985 The American Physical Society.

UR - https://www.scopus.com/pages/publications/0006934886

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0006934886&origin=recordpage

U2 - 10.1103/PhysRevB.32.2070

DO - 10.1103/PhysRevB.32.2070

M3 - RGC 21 - Publication in refereed journal

SN - 0163-1829

VL - 32

SP - 2070

EP - 2081

JO - Physical Review B

JF - Physical Review B

IS - 4

ER -