Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging

M. O. Alam; Dan Yang; B. Y. Wu; Y. C. Chan; L. Rufer; C. Bailey

doi:10.1109/EPTC.2006.342717

Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging

M. O. Alam
, Dan Yang
, B. Y. Wu
, Y. C. Chan^*
, L. Rufer
, C. Bailey

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Interfacial reaction and reliability related problems of the solder joint for both advanced electronic packaging applications and MEMS packaging applications are becoming crucial with the downscaling of the device size. In this study, the solid state interfacial reaction between the BGA Sn-3.5%Ag-0.5%Cu solder and the Au/Ni/Cu bond pad for MEMS applications was investigated at 150-200°C, for different time period ranging from 0 hrs to 400 hrs and compared with that of the Sn-3.5%Ag solder. We found that 0.5 wt% Cu addition plays a strong role on the interfacial reaction products and the reaction kinetics - especially, at a high temperature near the melting point of the solder alloy. While the Sn-3.5%Ag solder reacts with the Au/Ni/Cu metallization simply by forming only one binary intermetallic compound (BIMC), the Sn-3.5%Ag-0.5%Cu solder reacts in a completely different manner. © 2006 IEEE.

Original language	English
Title of host publication	Proceedings of the Electronic Packaging Technology Conference, EPTC
Publisher	IEEE
Pages	211-213
ISBN (Electronic)	1-4244-0665-X
ISBN (Print)	1-4244-0664-1, 9781424406654
DOIs	https://doi.org/10.1109/EPTC.2006.342717
Publication status	Published - Dec 2006
Event	2006 8th Electronics Packaging Technology Conference, EPTC - , Singapore Duration: 6 Dec 2006 → 8 Dec 2006

Conference

Conference	2006 8th Electronics Packaging Technology Conference, EPTC
Place	Singapore
Period	6/12/06 → 8/12/06

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10.1109/EPTC.2006.342717

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@inproceedings{a9101f5c380341c69e9532caeb2faa4f,

title = "Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging",

abstract = "Interfacial reaction and reliability related problems of the solder joint for both advanced electronic packaging applications and MEMS packaging applications are becoming crucial with the downscaling of the device size. In this study, the solid state interfacial reaction between the BGA Sn-3.5\%Ag-0.5\%Cu solder and the Au/Ni/Cu bond pad for MEMS applications was investigated at 150-200°C, for different time period ranging from 0 hrs to 400 hrs and compared with that of the Sn-3.5\%Ag solder. We found that 0.5 wt\% Cu addition plays a strong role on the interfacial reaction products and the reaction kinetics - especially, at a high temperature near the melting point of the solder alloy. While the Sn-3.5\%Ag solder reacts with the Au/Ni/Cu metallization simply by forming only one binary intermetallic compound (BIMC), the Sn-3.5\%Ag-0.5\%Cu solder reacts in a completely different manner. {\textcopyright} 2006 IEEE.",

author = "Alam, \{M. O.\} and Dan Yang and Wu, \{B. Y.\} and Chan, \{Y. C.\} and L. Rufer and C. Bailey",

year = "2006",

month = dec,

doi = "10.1109/EPTC.2006.342717",

language = "English",

isbn = "1-4244-0664-1",

pages = "211--213",

booktitle = "Proceedings of the Electronic Packaging Technology Conference, EPTC",

publisher = "IEEE",

address = "United States",

note = "2006 8th Electronics Packaging Technology Conference, EPTC ; Conference date: 06-12-2006 Through 08-12-2006",

}

Alam, MO, Yang, D, Wu, BY, Chan, YC, Rufer, L & Bailey, C 2006, Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging. in Proceedings of the Electronic Packaging Technology Conference, EPTC., 4147246, IEEE, pp. 211-213, 2006 8th Electronics Packaging Technology Conference, EPTC, Singapore, 6/12/06. https://doi.org/10.1109/EPTC.2006.342717

Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging. / Alam, M. O.; Yang, Dan; Wu, B. Y. et al.
Proceedings of the Electronic Packaging Technology Conference, EPTC. IEEE, 2006. p. 211-213 4147246.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging

AU - Alam, M. O.

AU - Yang, Dan

AU - Wu, B. Y.

AU - Chan, Y. C.

AU - Rufer, L.

AU - Bailey, C.

PY - 2006/12

Y1 - 2006/12

N2 - Interfacial reaction and reliability related problems of the solder joint for both advanced electronic packaging applications and MEMS packaging applications are becoming crucial with the downscaling of the device size. In this study, the solid state interfacial reaction between the BGA Sn-3.5%Ag-0.5%Cu solder and the Au/Ni/Cu bond pad for MEMS applications was investigated at 150-200°C, for different time period ranging from 0 hrs to 400 hrs and compared with that of the Sn-3.5%Ag solder. We found that 0.5 wt% Cu addition plays a strong role on the interfacial reaction products and the reaction kinetics - especially, at a high temperature near the melting point of the solder alloy. While the Sn-3.5%Ag solder reacts with the Au/Ni/Cu metallization simply by forming only one binary intermetallic compound (BIMC), the Sn-3.5%Ag-0.5%Cu solder reacts in a completely different manner. © 2006 IEEE.

AB - Interfacial reaction and reliability related problems of the solder joint for both advanced electronic packaging applications and MEMS packaging applications are becoming crucial with the downscaling of the device size. In this study, the solid state interfacial reaction between the BGA Sn-3.5%Ag-0.5%Cu solder and the Au/Ni/Cu bond pad for MEMS applications was investigated at 150-200°C, for different time period ranging from 0 hrs to 400 hrs and compared with that of the Sn-3.5%Ag solder. We found that 0.5 wt% Cu addition plays a strong role on the interfacial reaction products and the reaction kinetics - especially, at a high temperature near the melting point of the solder alloy. While the Sn-3.5%Ag solder reacts with the Au/Ni/Cu metallization simply by forming only one binary intermetallic compound (BIMC), the Sn-3.5%Ag-0.5%Cu solder reacts in a completely different manner. © 2006 IEEE.

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U2 - 10.1109/EPTC.2006.342717

DO - 10.1109/EPTC.2006.342717

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1-4244-0664-1

SN - 9781424406654

SP - 211

EP - 213

BT - Proceedings of the Electronic Packaging Technology Conference, EPTC

PB - IEEE

T2 - 2006 8th Electronics Packaging Technology Conference, EPTC

Y2 - 6 December 2006 through 8 December 2006

ER -

Solid state growth kinetics of complex intermetallics in the Pb-free Ball Grid Array (BGA) solder joint for MEMS packaging

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