Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology

J. W. Jang; P. G. Kim; K. N. Tu; D. R. Frear; P. Thompson

doi:10.1063/1.370627

Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology

J. W. Jang, P. G. Kim, K. N. Tu, D. R. Frear, P. Thompson

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

280 Citations (Scopus)

Abstract

The electroless Ni-P under bump metallization (UBM) is experimentally studied, which shows to be amorphous and has a composition of Ni₈₅P₁₅. The crystallization of electroless Ni-P was observed during solder reflow and the crystallization product was Ni₃P. The kinetics of crystallization was found to be diffusion controlled and the conservation of P occurred between electroless Ni-P and Ni₃P. A grain-boundary diffusion of the Ni or an interstitial diffusion of the P through the Ni₃P layer was proposed based on the kinetic data and microstructural observation.

Original language	English
Pages (from-to)	8456-8463
Journal	Journal of Applied Physics
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.370627
Publication status	Published - 15 Jun 1999
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{baf9f582cad743858b0d92ebb0fde8f8,

title = "Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology",

abstract = "The electroless Ni-P under bump metallization (UBM) is experimentally studied, which shows to be amorphous and has a composition of Ni85P15. The crystallization of electroless Ni-P was observed during solder reflow and the crystallization product was Ni3P. The kinetics of crystallization was found to be diffusion controlled and the conservation of P occurred between electroless Ni-P and Ni3P. A grain-boundary diffusion of the Ni or an interstitial diffusion of the P through the Ni3P layer was proposed based on the kinetic data and microstructural observation.",

author = "Jang, {J. W.} and Kim, {P. G.} and Tu, {K. N.} and Frear, {D. R.} and P. Thompson",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1999",

month = jun,

day = "15",

doi = "10.1063/1.370627",

language = "English",

volume = "85",

pages = "8456--8463",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology

AU - Jang, J. W.

AU - Kim, P. G.

AU - Tu, K. N.

AU - Frear, D. R.

AU - Thompson, P.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1999/6/15

Y1 - 1999/6/15

N2 - The electroless Ni-P under bump metallization (UBM) is experimentally studied, which shows to be amorphous and has a composition of Ni85P15. The crystallization of electroless Ni-P was observed during solder reflow and the crystallization product was Ni3P. The kinetics of crystallization was found to be diffusion controlled and the conservation of P occurred between electroless Ni-P and Ni3P. A grain-boundary diffusion of the Ni or an interstitial diffusion of the P through the Ni3P layer was proposed based on the kinetic data and microstructural observation.

AB - The electroless Ni-P under bump metallization (UBM) is experimentally studied, which shows to be amorphous and has a composition of Ni85P15. The crystallization of electroless Ni-P was observed during solder reflow and the crystallization product was Ni3P. The kinetics of crystallization was found to be diffusion controlled and the conservation of P occurred between electroless Ni-P and Ni3P. A grain-boundary diffusion of the Ni or an interstitial diffusion of the P through the Ni3P layer was proposed based on the kinetic data and microstructural observation.

UR - http://www.scopus.com/inward/record.url?scp=0032614004&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032614004&origin=recordpage

U2 - 10.1063/1.370627

DO - 10.1063/1.370627

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 85

SP - 8456

EP - 8463

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology

Abstract

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