Solar-blind photodetectors for harsh electronics

Dung-Sheng Tsai; Wei-Cheng Lien; Der-Hsien Lien; Kuan-Ming Chen; Meng-Lin Tsai; Debbie G. Senesky; Yueh-Chung Yu; Albert P. Pisano; Jr-Hau He

doi:10.1038/srep02628

Solar-blind photodetectors for harsh electronics

Dung-Sheng Tsai
, Wei-Cheng Lien
, Der-Hsien Lien
, Kuan-Ming Chen
, Meng-Lin Tsai
, Debbie G. Senesky
, Yueh-Chung Yu
, Albert P. Pisano
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

124 Citations (Scopus)

32 Downloads (CityUHK Scholars)

Abstract

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si (100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10¹³ cm⁻² of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

Original language	English
Article number	2628
Journal	Scientific Reports
Volume	3
Online published	11 Sept 2013
DOIs	https://doi.org/10.1038/srep02628
Publication status	Published - 2013
Externally published	Yes

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This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/

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@article{c27e62f29fc24e07b047aa8f76a5f920,

title = "Solar-blind photodetectors for harsh electronics",

abstract = "We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si (100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments. ",

author = "Dung-Sheng Tsai and Wei-Cheng Lien and Der-Hsien Lien and Kuan-Ming Chen and Meng-Lin Tsai and Senesky, \{Debbie G.\} and Yueh-Chung Yu and Pisano, \{Albert P.\} and Jr-Hau He",

year = "2013",

doi = "10.1038/srep02628",

language = "English",

volume = "3",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Solar-blind photodetectors for harsh electronics

AU - Tsai, Dung-Sheng

AU - Lien, Wei-Cheng

AU - Lien, Der-Hsien

AU - Chen, Kuan-Ming

AU - Tsai, Meng-Lin

AU - Senesky, Debbie G.

AU - Yu, Yueh-Chung

AU - Pisano, Albert P.

AU - He, Jr-Hau

PY - 2013

Y1 - 2013

N2 - We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si (100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

AB - We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si (100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

UR - https://www.scopus.com/pages/publications/84897885492

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84897885492&origin=recordpage

U2 - 10.1038/srep02628

DO - 10.1038/srep02628

M3 - RGC 21 - Publication in refereed journal

C2 - 24022208

SN - 2045-2322

VL - 3

JO - Scientific Reports

JF - Scientific Reports

M1 - 2628

ER -

Solar-blind photodetectors for harsh electronics

Abstract

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