Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

10 Scopus Citations
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Author(s)

  • Zongrui Wang
  • Huanli Dong
  • Ye Zou
  • Qiang Zhao
  • Jiahui Tan
  • Jie Liu
  • Xiuqiang Lu
  • Jinchong Xiao
  • Wenping Hu

Detail(s)

Original languageEnglish
Pages (from-to)7919-7927
Journal / PublicationACS Applied Materials and Interfaces
Volume8
Issue number12
Online published11 Mar 2016
Publication statusPublished - 30 Mar 2016
Externally publishedYes

Abstract

Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance. (Graph Presented).

Research Area(s)

  • bottom-contact organic field-effect transistor, contact resistance, low-cost electrode, micro/nanostructures, soft-etching method

Citation Format(s)

Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors. / Wang, Zongrui; Dong, Huanli; Zou, Ye et al.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 12, 30.03.2016, p. 7919-7927.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review