Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

7 Scopus Citations
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Author(s)

  • Wing-Shan Tam
  • Chi-Wah Kok
  • Sik-Lam Siu
  • Hei Wong

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)1163-1168
Journal / PublicationMicroelectronics Reliability
Volume54
Issue number6-7
Publication statusPublished - Jun 2014

Abstract

An Electrostatic Discharge (ESD) device with snapback breakdown property based on two abreast PN junctions with different reverse breakdown voltages is proposed. The proposed device can be implemented with conventional epitaxial silicon substrate with traditional VDMOS process, such that it can be applied to protect the dielectric layer under the gate of the transistor. The ESD protection characteristics of the proposed device can be easily adjusted by controlling the junction formation condition. The performance of the proposed device is validated by experimental measurements, which have shown to be able to withstand >2 kV ESD protection voltage consistently. The layout dependence of the proposed structure is also investigated. © 2013 Elsevier Ltd. All rights reserved.

Citation Format(s)

Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology. / Tam, Wing-Shan; Kok, Chi-Wah; Siu, Sik-Lam; Wong, Hei.

In: Microelectronics Reliability, Vol. 54, No. 6-7, 06.2014, p. 1163-1168.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review