Small band gap bowing in In1-xGaxN alloys

J. Wu; W. Walukiewicz; K. M. Yu; J. W. Ager III; E. E. Haller; Hai Lu; William J. Schaff

doi:10.1063/1.1489481

Small band gap bowing in In_1-xGa_xN alloys

J. Wu
, W. Walukiewicz^*
, K. M. Yu
, J. W. Ager III
, E. E. Haller
, Hai Lu
, William J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

652 Citations (Scopus)

Abstract

High-quality wurtzite-structured In-rich In_1-xGa_xN films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In_1-xGa_xN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In_1-xGa_xN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	4741-4743
Journal	Applied Physics Letters
Volume	80
Issue number	25
DOIs	https://doi.org/10.1063/1.1489481
Publication status	Published - 24 Jun 2002
Externally published	Yes

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@article{05be6216cb384bb7a6742f6c1935579a,

title = "Small band gap bowing in In1-xGaxN alloys",

abstract = "High-quality wurtzite-structured In-rich In1-xGaxN films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1-xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1-xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet. {\textcopyright} 2002 American Institute of Physics.",

author = "J. Wu and W. Walukiewicz and Yu, \{K. M.\} and \{Ager III\}, \{J. W.\} and Haller, \{E. E.\} and Hai Lu and Schaff, \{William J.\}",

year = "2002",

month = jun,

day = "24",

doi = "10.1063/1.1489481",

language = "English",

volume = "80",

pages = "4741--4743",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Small band gap bowing in In1-xGaxN alloys

AU - Wu, J.

AU - Walukiewicz, W.

AU - Yu, K. M.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Lu, Hai

AU - Schaff, William J.

PY - 2002/6/24

Y1 - 2002/6/24

N2 - High-quality wurtzite-structured In-rich In1-xGaxN films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1-xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1-xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet. © 2002 American Institute of Physics.

AB - High-quality wurtzite-structured In-rich In1-xGaxN films (0≤x≤0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1-xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1-xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet. © 2002 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/79956041003

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79956041003&origin=recordpage

U2 - 10.1063/1.1489481

DO - 10.1063/1.1489481

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 80

SP - 4741

EP - 4743

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -