Size distribution of end-of-range dislocation loops in silicon-implanted silicon

G. Z. Pan; K. N. Tu; S. Prussin

doi:10.1063/1.115895

Size distribution of end-of-range dislocation loops in silicon-implanted silicon

G. Z. Pan, K. N. Tu, S. Prussin

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 10¹⁶ Si/cm² and annealed at 750 °C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process. An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. © 1996 American Institute of Physics.

Original language	English
Pages (from-to)	1654-1656
Journal	Applied Physics Letters
Volume	68
Issue number	12
DOIs	https://doi.org/10.1063/1.115895
Publication status	Published - 18 Mar 1996
Externally published	Yes

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title = "Size distribution of end-of-range dislocation loops in silicon-implanted silicon",

abstract = "The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 and annealed at 750 °C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process. An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. {\textcopyright} 1996 American Institute of Physics.",

author = "Pan, {G. Z.} and Tu, {K. N.} and S. Prussin",

year = "1996",

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T1 - Size distribution of end-of-range dislocation loops in silicon-implanted silicon

AU - Pan, G. Z.

AU - Tu, K. N.

AU - Prussin, S.

PY - 1996/3/18

Y1 - 1996/3/18

N2 - The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 and annealed at 750 °C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process. An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. © 1996 American Institute of Physics.

AB - The size and distribution of end-of-range dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 and annealed at 750 °C for various times have been studied by transmission electron microscropy. The normalized distribution profile of the dislocation loops has been found to be invariant with time, based on density and size measurement. The profile is quite different from the conventional distribution profile of Oswald ripening in grain growth and precipitate coarsening. Measurement of the total number of interstitials bound in the extrinsic loops shows that the ripening is a conservative process. An explanation for the particular distribution profile is attributed to the stress field associated with the dislocation loops. © 1996 American Institute of Physics.

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U2 - 10.1063/1.115895

DO - 10.1063/1.115895

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 68

SP - 1654

EP - 1656

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Size distribution of end-of-range dislocation loops in silicon-implanted silicon

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