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Size dependence of the optical gap in silicon nanocrystals embedded into a-Si: H matrix

  • V. A. Burdov
  • , M. F. Cerqueira
  • , M. I. Vasilevskiy
  • , A. M. Satanin

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

A simple model for Si nano-crystallites (NC's) embedded in amorphous silicon matrix is considered within the envelope function approximation. It is shown that, although the effect of the NC's on the tail states is small, there are electron and hole states localized in the NC's and separated by an energy of the order of 2eV. These states can be responsible for the experimentally observed features in the photoluminescence spectra of NC-Si/a-Si:H films. © 2005 American Institute of Physics.
Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages857-858
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
Event27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

Name
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference27th International Conference on the Physics of Semiconductors (ICPS 27)
PlaceUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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